MT48H4M16LFB4-75:H TR Micron Technology Inc, MT48H4M16LFB4-75:H TR Datasheet - Page 41

• Manufacturer Part Number: MT48H4M16LFB4-75:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1392-2

Table 13:
Table 14:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
Parameter
Parameter/Condition
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data High-Z during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
Data-out to High-Z from PRECHARGE command
Operating current:
Active mode; Burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Nonpower-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No
accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
t
Operating current:
Burst mode; Continuous burst; READ or WRITE; All banks active,
half DQ toggling every cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
RCD met; No accesses in progress
AC Functional Characteristics
Notes: 5, 6, 8, 9, and 11; notes appear on page 43 and 44
I
Notes: 1, 5, 6, 11, and 13; notes appear on page 43 and 44; V
DD
Specifications and Conditions (x16)
t
RC =
t
t
RFC =
RFC = 15.625µs
t
RC (MIN)
t
RFC (MIN)
41
CL = 3
CL = 2
Symbol
I
I
I
I
DD
DD
I
DD
DD
I
I
I
DD
DD
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
ZZ
2N
3N
Symbol
2P
3P
t
t
1
4
5
6
ROH(3)
ROH(2)
t
t
t
t
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
MRD
DQD
DQZ
CCD
DAL
PED
DPL
BDL
CDL
RDL
DD
64Mb: 4 Meg x 16 Mobile SDRAM
= 1.7V–1.95V, V
150
-75
60
10
15
50
75
10
5
2
-75
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
Max
Electrical Specifications
150
55
10
15
50
60
10
-8
DD
5
2
-8
©2006 Micron Technology, Inc. All rights reserved.
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
Q = 1.7V–1.95V
Units
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
18, 19, 26
Notes
Notes
19, 25
18, 19
25, 27
15, 21
16, 21
16, 21
3, 18,
3, 12,
3, 18,
3, 18,
3, 18,
3, 12,
3, 12,
19
25
19
19
19
17
14
14
17
17
17
17
17
17
24
17
17