N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 116

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N25Q128A13BF840F

Manufacturer Part Number
N25Q128A13BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BF840F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
Instructions
9.3.9
116/157
Except for the parallelizing of the instruction code, address and input data on the four pins
DQ0, DQ1, DQ2 and DQ3, the instruction functionality (as well as the locking OTP method)
is exactly the same as the Program OTP (POTP) instruction of the Extended SPI protocol.
Figure 83. Program OTP instruction sequence QIO-SPI
Subsector Erase (SSE)
The Subsector Erase (SSE) instruction sets to '1' (FFh) all bits inside the chosen subsector.
Before it can be accepted, a Write Enable (WREN) instruction must have been executed
previously.
Except for the instruction code and the address on the four pins DQ0, DQ1, DQ2 and DQ3,
the instruction functionality is exactly the same as the Subsector Erase (SSE) instruction of
the Extended SPI protocol.
S
DQ0
DQ2
C
DQ1
DQ3
Instruction
0
1
20 16 12 8
21 17 13 9
22 18 14 10
23 19 15 11 7
2
24-Bit Address
3
4
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6
5
6
4
2
7
0
1
3
8
6
byte1
4
5
7
Data
9 10 11 12 13
2
0
1
3
5
6
4
7
byte 2
Data
1
2
3
0
byte n
©2010 Micron Technology, Inc. All rights reserved.
5
6
Data
4
7
1
2
0
3
N25Q128 - 3 V

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