N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 50

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N25Q128A13BF840F

Manufacturer Part Number
N25Q128A13BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BF840F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Memory organization
8
50/157
HOLD
W/V
DQ0
DQ1
DQ2
DQ3
PP
C
Memory organization
The memory is organized as:
Each page can be individually programmed: bits are programmed from 1 to 0. The device is
Subsector eraseble, Sector eraseble, or Bulk Erasable, but not Page Erasable: bits are
erased from 0 to 1.
Figure 9.
S
16,777,216 bytes (8 bits each)
256 sectors (64 Kbytes each)
4,096 subsectors (4 Kbytes each)
65,536 pages (256 bytes each)
64 OTP bytes located outside the main memory array
Address Register
Control Logic
and Counter
Block diagram
00000h
I/O Shift Register
256 bytes (page size)
High Voltage
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Generator
X Decoder
Data Buffer
256 Byte
FFFFFFh
000FFh
64 OTP bytes
©2010 Micron Technology, Inc. All rights reserved.
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Status
AI13722a
N25Q128 - 3 V

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