N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 67

• Manufacturer Part Number: N25Q128A13BF840F
• Description: IC SRL FLASH 128MB NMX 8-VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13BF840F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N25Q128 - 3 V
9.1.12
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 20. Write Disable instruction sequence
Page Program (PP)
The Page Program (PP) instruction allows bytes to be programmed in the memory
(changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable (WREN) instruction has been
decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, three address bytes and at least one data byte on Serial Data input
(DQ0). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that
go beyond the end of the current page are programmed from the start address of the same
S
C
DQ0
DQ1
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Write to Lock Register (WRLR) instruction completion
Write Non Volatile Configuration Register (WRNVCR) instruction completion
Write Volatile Configuration Register (WRVCR) instruction completion
Write Volatile Enhanced Configuration Register (WRVECR) instruction completion
Page Program (PP) instruction completion
Dual Input Fast Program (DIFP) instruction completion
Dual Input Extended Fast Program (DIEFP) instruction completion
Quad Input Fast Program (QIFP) instruction completion
Quad Input Extended Fast Program (QIEFP) instruction completion
Program OTP (POTP) instruction completion
Subsector Erase (SSE) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
High Impedance
0
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Instruction
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