CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 15

• Manufacturer Part Number: CY7C1512AV18-250BZI
• Description: IC SRAM 72MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 001-06984 Rev. *B
TAP Controller Block Diagram
TAP Electrical Characteristics
V
V
V
V
V
V
I
Note:
11. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
X
TDI
OH1
OH2
OL1
OL2
IH
IL
Parameter
TCK
TMS
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and OutputLoad Current
Selection
Circuitry
Description
Over the Operating Range
108
31
Boundary Scan Register
30
.
Identification Register
Instruction Register
TAP Controller
PRELIMINARY
29
.
I
I
I
I
GND ≤ V
OH
OH
OL
OL
.
.
= 2.0 mA
= 100 µA
= –2.0 mA
= –100 µA
Test Conditions
.
.
[11, 15, 18]
I
≤ V
Bypass Register
2
2
2
DD
1
1
1
0
0
0
0
0.65V
Min.
–0.3
1.4
1.6
−5
DD
Selection
Circuitry
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
V
0.35V
DD
Max.
0.4
0.2
5
+ 0.3
DD
Page 15 of 26
TDO
Unit
µA
V
V
V
V
V
V
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