CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 20

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CY7C1512AV18-250BZI

Manufacturer Part Number
CY7C1512AV18-250BZI
Description
IC SRAM 72MBIT 250MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number:
CY7C1512AV18-250BZI
Manufacturer:
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Part Number:
CY7C1512AV18-250BZIT
Manufacturer:
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Quantity:
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Document #: 001-06984 Rev. *B
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State .................................... –0.5V to V
DC Input Voltage
Electrical Characteristics
AC Input Requirements
Capacitance
DC Electrical Characteristics
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
C
C
C
Notes:
15. All voltage referenced to Ground.
16. Output are impedance controlled. I
17. Output are impedance controlled. I
18. Overshoot: V
19. Power-up: Assumes a linear ramp from 0V to V
20. V
21. Tested initially and after any design or process change that may affect these parameters.
X
OZ
DD
SB1
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
IN
CLK
O
Parameter
Parameter
REF
[20]
(min.) = 0.68V or 0.46V
IH
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power-down
Current
(AC) < V
[21]
DD
[18]
Input HIGH Voltage
Input LOW Voltage
Input Capacitance
Clock Input Capacitance
Output Capacitance
Operating Supply
DD
DDQ
...............................–0.5V to V
DDQ
Description
Relative to GND........ –0.5V to +2.9V
Relative to GND ...... –0.5V to +V
Over the Operating Range
Description
Description
+ 0.85V (Pulse width less than t
DDQ
, whichever is larger, V
OH
OL
Over the Operating Range
= (V
= –(V
Over the Operating Range
[18,13]
[18]
DDQ
DDQ
[15]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
(min.) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Max. V
Deselected, V
V
1/t
OH
OL
DD
IN
CYC,
T
V
V
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
≤ V
Test Conditions
= Max., I
A
DD
DDQ
Test Conditions
DDQ
= 25°C, f = 1 MHz,
CYC
(max.) = 0.95V or 0.54V
DD
DD
IL
Inputs Static
PRELIMINARY
= 1.8V
= 1/t
I
I
= 1.5V
f = f
/2), Undershoot: V
Test Conditions
, Both Ports
+ 0.5V
+ 0.5V
≤ V
≤ V
OUT
CYC
MAX
DDQ
DDQ,
DD
IN
≥ V
[15, 18]
= 0 mA,
=
Output Disabled
IH
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
or
Com’l
Ind’l
Range
IL
(AC) > –1.5V (Pulse width less than t
167 MHz
200 MHz
250 MHz
167 MHz
200 MHz
250 MHz
DDQ
V
, whichever is smaller.
REF
IH
Min.
< V
Temperature (T
+ 0.2
DD
–40°C to +85°C
0°C to +70°C
and V
Ambient
V
V
DDQ
DDQ
V
V
DDQ
DDQ
REF
Min.
–0.3
0.68
V
Max.
/2 – 0.12
/2 – 0.12
1.7
1.4
−5
−5
5.5
8.5
SS
< V
Typ.
6
+ 0.1
– 0.2
DD
A
.
)
V
CYC
Typ.
0.75
1.8 ± 0.1V
1.8
1.5
REF
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
V
Max.
/2).
DD
- 0.2
[19]
V
V
DDQ
DDQ
V
V
DDQ
REF
V
Max.
0.95
V
800
850
950
360
380
400
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
5
5
DD
Page 20 of 26
– 0.1
+ 0.3
1.4V to V
V
Unit
DDQ
Unit
pF
pF
pF
V
V
[19]
Unit
mA
mA
mA
mA
mA
mA
µA
µA
DD
V
V
V
V
V
V
V
V
V
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