CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 16

• Manufacturer Part Number: CY7C1512AV18-250BZI
• Description: IC SRAM 72MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 001-06984 Rev. *B
TAP AC Switching Characteristics
TAP Timing and Test Conditions
Notes:
12. t
13. Test conditions are specified using the load in TAP AC test conditions. t
t
t
t
t
Set-up Times
t
t
t
Hold Times5
t
t
t
Output Times
t
t
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Parameter
CS
and t
TDO
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
Z
0
= 50Ω
Test Mode Select
TMS
Test Clock
TCK
Test Data-In
TDI
Test Data-Out
TDO
(a)
GND
0.9V
C
50Ω
L
= 20 pF
[13]
Over the Operating Range
Description
PRELIMINARY
t
TMSS
t
TDIS
R
/t
F
= 1 ns.
t
TH
0V
[12, 13]
t
t
TDOV
TL
t
t
TMSH
TDIH
1.8V
ALL INPUT PULSES
0.9V
t
TCYC
t
TDOX
Min.
50
20
20
5
5
5
5
5
5
0
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
Max.
20
10
Page 16 of 26
MHz
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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