th58nvg1s3aft05 TOSHIBA Semiconductor CORPORATION, th58nvg1s3aft05 Datasheet - Page 2

• Manufacturer Part Number: th58nvg1s3aft05
• Description: 2gbit 256m U 8bits Cmos Nand E2 Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
x The products described in this document are subject to the foreign exchange and foreign trade laws.
x The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
x The information contained herein is subject to change without notice.
RY
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
V
V
V
P
T
T
T
C
C
* * This parameter is periodically sampled and is not tested for every device.
I/O1
I/O8
CLE
ALE
to
/
WE
WP
SOLDER
STG
OPR
CC
IN
I/O
D
IN
OUT
CE
RE
BY
SYMBOL
SYMB0L
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
Input
Output
*(Ta
RY
Control
control
circuit
Logic
I/O
/
BY
25°C, f 1 MHz)
PARAMETER
RATING
Status register
Command register
Address register
Control
circuit
HV generator
CONDITION
V
V
IN
OUT
 0.6 V to V
0 V
0 V
 0.6 to 4.6
 0.6 to 4.6
-55 to 150
CC
VALUE
0 to 70
MIN
260
0.3
 0.3 V ( ½ 4.6 V)


TH58NVG1S3AFT05
2003-05-19A
Column decoder
Column buffer
Data register
Sense amp
cell array
Memory
MAX
20
20
V
CC
V
SS
UNIT
UNIT
pF
pF
°C
°C
°C
W
V
V
V
2/32