th58nvg1s3aft05 TOSHIBA Semiconductor CORPORATION, th58nvg1s3aft05 Datasheet - Page 26

• Manufacturer Part Number: th58nvg1s3aft05
• Description: 2gbit 256m U 8bits Cmos Nand E2 Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(7) Status Read during a Read operation
(8) Auto programming failure
(9)
RY
comma
RY
WE
CE
RE
/
BY
Read mode.
to Read mode. In this case, data output starts automatically from address N and address input is
unnecessary
circuit.
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
/
BY
The device status can be read out by inputting the Status Read command “70H” in Read mode.
Once the device has been set to Status Read mode by a “70H” command, the device will not return to
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00H” is input during [A], Status mode is reset and the device returns
A pull-up resistor needs to be used for termination because the
: termination for the Ready/Busy pin (
00
80
80
Device
Address N
Address
M
N
V
V
M
CC
SS
V
CC
Figure 19.
Data
input
10
10
R
C
L
RY
Figure 18.
page to address N in another block without the data input sequence.
command, address and data is necessary.
If the programming result for page address M is Fail, do not try to program the
Because the previous input data has been lost, the same input sequence of 80H
/
BY
RY
Figure 20.
/
Ready
t
BY
3.0 V
r
30
70
1.5 P s
1.0 P s
0.5 P s
)
command input
t
0
f
Status Read
V
CC
1.0 V
I/O
1 K :
70
Fail
RY
Busy
/
2 K :
BY
Status Read
t
r
buffer consists of an open drain
80
R
t
f
3 K :
TH58NVG1S3AFT05
Address
[A]
00
2003-05-19A
N
V
Ta 25°C
C
1.0 V
CC
L
4 K :
Status output
100 pF
input
Data
3.3 V
t
r
10
15 ns
10 ns
5 ns
3.0 V
26/32
t
f