th58nvg1s3aft05 TOSHIBA Semiconductor CORPORATION, th58nvg1s3aft05 Datasheet - Page 31

• Manufacturer Part Number: th58nvg1s3aft05
• Description: 2gbit 256m U 8bits Cmos Nand E2 Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(14) Failure phenomena for Program and Erase operations
(15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery
is low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data and/or
damage to data.
Block
Page
Single Bit
The following possible failure modes should be considered when implementing a highly reliable system.
x ECC : Error Correction Code .
x Block Replacement
The device may fail during a Program or Erase operation.
Program
Erase
FAILURE MODE
Erase Failure
Programming Failure
Programming Failure
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
“ 1 to
memory
Buffer
0 “
Error occurs
Status Read after Erase o Block Replacement
Status Read after Program o Block Replacement
(1) Block Verify after Program o Retry
(2) ECC
Figure 28.
DETECTION AND COUNTERMEASURE SEQUENIE
Block A
Block B
reprogram the data into another Block (Block
B) by loading from an external buffer. Then,
prevent further system accesses to Block A ( by
creating a bad block table or by using another
appropriate scheme).
When an error happens in Block A, try to
TH58NVG1S3AFT05
2003-05-19A
31/32