th58nvg1s3aft05 TOSHIBA Semiconductor CORPORATION, th58nvg1s3aft05 Datasheet - Page 4
th58nvg1s3aft05
Manufacturer Part Number
th58nvg1s3aft05
Description
2gbit 256m U 8bits Cmos Nand E2 Prom
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TH58NVG1S3AFT05.pdf
(32 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TH58NVG1S3AFT05
Manufacturer:
RAMTRON
Quantity:
2 100
Company:
Part Number:
th58nvg1s3aft05DBJ
Manufacturer:
TOSHIBA
Quantity:
8
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
CS
CH
WP
ALS
ALH
DS
DH
WC
WH
WW
RR
RW
RP
RC
REA
CEA
CLEA
ALEA
REAID
OH
RHZ
CHZ
REH
IR
RSTO
CSTO
CLSTO
RHW
WHC
WHR
R
WB
RST
SYMBOL
0 to 70Æ, V
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Ready to WE Falling Edge
Read Pulse Width
Read Cycle Time
CLE Access Time
ALE Access Time
Data Output Hold Time
Output-High-impedance-to- RE Falling Edge
CLE Access Time (Status Read)
Memory Cell Array to Starting Address
Device Reset Time (Read/Program/Erase)
CE Setup Time
CE Hold Time
RE Access Time (Serial Data Access)
CE Access Time
RE Access Time (ID Read)
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
RE Access Time (Status Read)
CE Access Time (Status Read)
RE High to WE Low
WE High Hold Time
WP High to WE Low
WE High to CE Low
WE High to RE Low
WE High to Busy
CC
2.7V ~ 3.6V)
PARAMETER
MIN
100
10
10
25
10
20
10
50
15
20
20
35
50
10
15
30
30
30
0
0
0
0
TH58NVG1S3AFT05
6/10/500
MAX
200
35
45
45
45
35
30
20
35
45
45
25
2003-05-19A
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ps
ns
Ps
NOTES
4/32