th58nvg1s3aft05 TOSHIBA Semiconductor CORPORATION, th58nvg1s3aft05 Datasheet - Page 5

• Manufacturer Part Number: th58nvg1s3aft05
• Description: 2gbit 256m U 8bits Cmos Nand E2 Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC TEST CONDITIONS
PROGRAMMING AND ERASING CHARACTERISTICS
(Ta
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
t
N
t
PROG
BERASE
SYMBOL
(1) Refer to Application Note (12) toward the end of this document.
0 to 70Æ, V
Average Programming Time
Number of Programming Cycles on Same Page
(per 512+16 bytes)
Block Erasing Time
PARAMETER
CC
2.7V ~ 3.6V)
PARAMETER
MIN



C
L
(100 pF)  1 TTL
CONDITION
2.4 V, 0.4 V
1.5 V, 1.5 V
1.5 V, 1.5 V
TYP.
200

3ns
2
MAX
TH58NVG1S3AFT05
700
2
4
2003-05-19A
UNIT
ms
P s
NOTES
(1)
5/32