DAC1408D650C1 NXP [NXP Semiconductors], DAC1408D650C1 Datasheet - Page 7

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DAC1408D650C1

Manufacturer Part Number
DAC1408D650C1
Description
Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
9. Characteristics
Table 5.
V
typical values measured at V
sample rate; PLL off unless otherwise specified.
DAC1408D650
Preliminary data sheet
Symbol
V
V
V
I
I
I
ΔI
P
Clock inputs (CLKINN, CLKINP)
V
V
R
C
Digital inputs (SDIO, SCLK, SCS_N, RESET_N)
V
DDA(3V3)
DDD(1V8)
DDA(1V8)
DDA(1V8)
DDA(3V3)
DDD(1V8)
DDA(1V8)
tot
i
idth
IL
i
i
DDD
= V
Characteristics
DDD
Parameter
analog supply voltage
(3.3 V)
digital supply voltage
(1.8 V
analog supply voltage
(1.8 V)
analog supply current
(3.3 V)
digital supply current,
(1.8 V)
analog supply current,
(1.8 V)
digital supply current
difference
total power dissipation f
input voltage
input differential
threshold voltage
input resistance
input capacitance
LOW-level input
voltage
= 1.7 V to 1.9 V; V
DDA(1V8)
[2]
DDA(3V3)
= V
DDD
Conditions
f
4× interpolation; NCO on
f
4× interpolation; NCO on
f
4× interpolation; NCO on
X/sin X function on;
f
4× interpolation; NCO off;
DAC Q off
f
4× interpolation; NCO off
f
4× interpolation; NCO on
f
2× interpolation; NCO off
f
2× interpolation; NCO on
Power-down mode; f
range: CLK+ or CLK−
|V
|V
DAC1408D; up to 650 Msps; 2×, 4× or 8× interpolating with JESD204A
o
o
o
s
s
s
s
s
s
All information provided in this document is subject to legal disclaimers.
gpd
gpd
= 640 Msps
= 640 Msps;
= 640 Msps;
= 640 Msps;
= 625 Msps;
= 625 Msps;
= 19 MHz; f
= 19 MHz; f
= 19 MHz; f
Complete device;
Power-down mode
DAC A and DAC B;
Power-down mode
DAC A and DAC B;
Sleep mode
= 3.0 V to 3.6 V; AGND and GND are shorted together; T
= 1.8 V; V
| < 50 mV
| < 50 mV
Rev. 02 — 11 August 2010
DDA(3V3)
s
s
s
[3]
[3]
= 640 Msps;
= 640 Msps;
= 640 Msps;
o
= 3.3 V; T
= 19 MHz; f
Test
I
I
I
I
I
I
I
C
C
C
C
C
I
I
I
C
C
D
D
C
amb
s
[1]
= 640 Msps; 4× interpolation; NCO on
= +25
°
C; R
Min
3.0
1.7
1.7
-
-
-
-
-
-
-
-
-
-
-
-
825
−100
-
-
GND
L
DAC1408D650
= 50
Typ
3.3
1.8
1.8
43
352
408
53
0.8
1.24
1.5
1.36
1.54
0.05
0.6
0.92
-
-
10
0.5
-
Ω
; I
O(fs)
amb
= 20 mA; maximum
Max
3.6
1.9
1.9
-
-
-
-
-
-
-
-
-
-
-
-
1575
+100
-
-
0.54
© NXP B.V. 2010. All rights reserved.
=
40
°
C to +85
Unit
V
V
V
mA
mA
mA
mA
W
W
W
W
W
W
W
W
mV
mV
pF
V
7 of 98
°
C;

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