C8051F540-TB Silicon Laboratories Inc, C8051F540-TB Datasheet - Page 52
C8051F540-TB
Manufacturer Part Number
C8051F540-TB
Description
BOARD PROTOTYPE W/C8051F540
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Specifications of C8051F540-TB
Contents
Board
Processor To Be Evaluated
C8051F54x
Processor Series
C8051F54x
Interface Type
USB
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051F54x
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1672
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C8051F54x
Table 6.4. Reset Electrical Characteristics
–40 to +125 °C unless otherwise specified.
Table 6.5. Flash Electrical Characteristics
V
52
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
V
V
Missing Clock Detector Timeout
Reset Time Delay
Minimum RST Low Time to
Generate a System Reset
V
V
Flash Size
Endurance
Retention
Erase Cycle Time
Write Cycle Time
V
DD
DD
DD
DD
DD
DD
1. On the 16 kB Flash devices, 1024 bytes at addresses 0x3C00 to 0x3FFF are reserved.
2. See Table 6.4 for the
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
RST Threshold (V
RST Threshold (V
Monitor Turn-on Time
Monitor Supply Current
Parameter
Parameter
RST-LOW
RST-HIGH
C8051F540/1/2/3
C8051F544/5/6/7
125
25 MHz System Clock
25 MHz System Clock
Write/Erase Operations
V
RST-HIGH
°
C
)
)
Conditions
VIO = 5 V; IOL = 70 µA
RST = 0.0 V, VIO = 5 V
Time from last system clock
rising edge to reset initiation
V
V
Delay between release of
any reset source and code
execution at location 0x0000
specification.
DD
DD
= 2.1 V
= 2.5 V
Conditions
Rev. 1.1
V
RST-HIGH
20 k
Min
10
28
79
2
0.7 x V
16384
1.65
2.25
Min
200
200
8192
—
—
—
—
—
—
6
150 k
Typ
30
84
—
—
IO
1
1.75
2.30
Typ
340
250
155
49
60
—
—
—
—
1
Max
125
45
—
—
—
0.3 x V
Max
1.80
2.45
115
600
600
175
100
40
—
—
2
Erase/Write
IO
Bytes
Years
Units
ms
µs
V
Units
mV
µA
µA
µs
µs
µs
µs
V
V
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