MC908JB8ADWE Freescale Semiconductor, MC908JB8ADWE Datasheet - Page 261

• Manufacturer Part Number: MC908JB8ADWE
• Description: IC MCU 3MHZ 8K FLASH 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JB8ADWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: USB
• Peripherals: LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: HC08JB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USB
• Maximum Clock Frequency: 3 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Operating Supply Voltage: 5.25 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 256Byte
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

18.13 Memory Characteristics
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
NOTES:
RAM data retention voltage
FLASH block size
FLASH programming size
FLASH read bus clock frequency
FLASH block erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time speci-
ory
erase / program cycles.
erase / program cycles.
fied.
READ
rcv
HV
is defined as the time it need before start the read of the flash after turn off the HVEN bit
is defined as the cumulative high voltage programming time to the same row before next erase
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(8)
(6)
(7)
Erase
MErase
(Min), there is no erase-disturb, but it reduced the endurance of the flash memory
(Min), there is no erase-disturb, but it reduced the endurance of the flash mem-
Electrical Specifications
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
t
rcv
HV
t
t
t
nvhl
RDR
—
nvs
nvh
pgs
—
—
—
—
(4)
(5)
(1)
(2)
(3)
32 k
Min
100
10k
10k
1.3
10
20
10
—
2
2
5
5
1
512
64
Electrical Specifications
Memory Characteristics
8.4 M
Max
25
—
—
—
—
—
—
—
—
—
—
—
—
Technical Data
Cycles
Cycles
Bytes
Bytes
Years
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
261