DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 132

• Manufacturer Part Number: DF2329BVTE25V
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2329BVTE25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2329BVTE25V

Section 2 Instruction Descriptions
2.2.32 (1)
INC (INCrement)
Operation
Rd + 1
Assembly-Language Format
INC.B Rd
Operand Size
Byte
Description
This instruction increments an 8-bit register Rd (destination operand) and stores the result in the
8-bit register Rd.
Available Registers
Rd: R0L to R7L, R0H to R7H
Operand Format and Number of States Required for Execution
Notes
An overflow is caused by the operation H'7F + 1
Rev. 4.00 Feb 24, 2006 page 116 of 322
REJ09B0139-0400
Register direct
Addressing
Mode
Rd
INC (B)
Mnemonic
INC.B
Operands
Rd
1st byte
0
A
Condition Code
H: Previous value remains unchanged.
N: Set to 1 if the result is negative; otherwise
Z: Set to 1 if the result is zero; otherwise
V: Set to 1 if an overflow occurs; otherwise
C: Previous value remains unchanged.
H'80.
2nd byte
0
Instruction Format
cleared to 0.
cleared to 0.
cleared to 0.
—
I
rd
UI H
—
—
3rd byte
—
U
N
4th byte
Z
V
Increment
—
States
No. of
C
1