DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 205

• Manufacturer Part Number: DF2329BVTE25V
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2329BVTE25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2329BVTE25V

2.2.54 (1)
ROTXR (ROTate with eXtend carry Right)
Operation
Rd (right rotation through carry flag)
Assembly-Language Format
ROTXR.B Rd
Operand Size
Byte
Description
This instruction rotates the bits in an 8-bit register Rd (destination operand) one bit to the right
through the carry flag. The carry flag is rotated into the most significant bit (bit 7). The least
significant bit (bit 0) rotates into the carry flag.
Available Registers
Rd: R0L to R7L, R0H to R7H
Operand Format and Number of States Required for Execution
Notes
Register direct
Addressing
Mode
ROTXR (B)
Mnemonic
ROTXR.B
MSB
b7
Operands
Rd
. . . . . .
Rd
1st byte
1
3
Condition Code
H: Previous value remains unchanged.
N: Set to 1 if the result is negative; otherwise
Z: Set to 1 if the result is zero; otherwise
V: Always cleared to 0.
C: Receives the previous value in bit 0.
2nd byte
0
Instruction Format
cleared to 0.
cleared to 0.
Rev. 4.00 Feb 24, 2006 page 189 of 322
—
I
LSB
rd
b0
UI H
—
Section 2 Instruction Descriptions
—
3rd byte
—
U
C
Rotate through Carry
N
4th byte
REJ09B0139-0400
Z
V
0
States
No. of
C
1