DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 60

IC H8S MCU FLASH 384K 120TQFP

DF2329BVTE25V

Manufacturer Part Number
DF2329BVTE25V
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2329BVTE25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2329BVTE25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas
Quantity:
301
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 2 Instruction Descriptions
2.1.3
The symbols used in the condition-code description are defined as follows.
Symbol
For details on changes of the condition code, see section 2.8, Condition Code Modification.
2.1.4
The symbols used in the instruction format descriptions are listed below.
Symbol
IMM
abs
disp
rs, rd, rn
ers, erd, ern
Rev. 4.00 Feb 24, 2006 page 44 of 322
REJ09B0139-0400
*
0
1
Condition Code
Instruction Format
Meaning
Changes according to the result of instruction execution
Undetermined (no guaranteed value)
Always cleared to 0
Always set to 1
Not affected by execution of the instruction
Varies depending on conditions; see the notes
Meaning
Immediate data (2, 3, 8, 16, or 32 bits)
Absolute address (8, 16, 24, or 32 bits)
Displacement (8, 16, or 32 bits)
Register field (4 bits). The symbols rs, rd, and rn correspond to operand symbols
Rs, Rd, and Rn.
Register field (3 bits). The symbols ers, erd, and ern correspond to operand
symbols ERs, ERd, and ERn.

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