DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 144

• Manufacturer Part Number: DF2329BVTE25V
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2329BVTE25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2329BVTE25V

Section 2 Instruction Descriptions
2.2.36
LDM (LoaD to Multiple registers)
Operation
@SP+
Assembly-Language Format
LDM.L @SP+, <register list>
Operand Size
Longword
Description
This instruction restores data saved on the stack to a specified list of registers. Registers are
restored in descending order of register number.
Two, three, or four registers can be restored by one LDM instruction. The following ranges can be
specified in the register list.
Two registers:
Three registers: ER0–ER2 or ER4–ER6
Four registers: ER0–ER3 or ER4–ER7
Available Registers
ERn: ER0 to ER7
Rev. 4.00 Feb 24, 2006 page 128 of 322
REJ09B0139-0400
LDM
ERn (register list)
ER0–ER1, ER2–ER3, ER4–ER5, or ER6–ER7
Condition Code
H: Previous value remains unchanged.
N: Previous value remains unchanged.
Z: Previous value remains unchanged.
V: Previous value remains unchanged.
C: Previous value remains unchanged.
—
I
UI H
—
—
—
U
Restore Data from Stack
—
N
—
Z
— —
V
C