DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 336

IC H8S MCU FLASH 384K 120TQFP

DF2329BVTE25V

Manufacturer Part Number
DF2329BVTE25V
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2329BVTE25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2329BVTE25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas
Quantity:
301
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 4 Basic Timing
4.4
The external address space is accessed with an 8-bit or 16-bit data bus width in a two-state or
three-state bus cycle. Figure 4.5 shows the read timing for two-state and three-state access. Figure
4.6 shows the write timing for two-state and three-state access. In three-state access, wait states
can be inserted. For further details, refer to the relevant microcontroller hardware manual.
Rev. 4.00 Feb 24, 2006 page 320 of 322
REJ09B0139-0400
External Address Space Access Timing
Address bus
AS
RD
HWR, LWR
Data bus
Figure 4.4 Pin States during On-Chip Supporting Module Access
T1
High-impedance state
Unchanged
Bus cycle
High
High
High
T2

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