DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 248

IC H8S MCU FLASH 384K 120TQFP

DF2329BVTE25V

Manufacturer Part Number
DF2329BVTE25V
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2329BVTE25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2329BVTE25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas
Quantity:
301
Part Number:
DF2329BVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 2 Instruction Descriptions
STMAC (STore from MAC register)
Operand Format and Number of States Required for Execution
Note: * A maximum of three additional states are required for execution of this instruction within three states
Notes
Rev. 4.00 Feb 24, 2006 page 232 of 322
REJ09B0139-0400
Register direct
Register direct
Addressing
Mode
after execution of a MAC instruction. For example, if there is a one-state instruction (such as NOP)
between the MAC instruction and this instruction, this instruction will be two states longer.
The number of states may differ depending on the product. For details, refer to the relevant
microcontroller hardware manual of the product in question.
Mnemonic
STMAC
STMAC
MACH, ERd
MACL, ERd
Operands
1st byte
0
0
2
2
2nd byte
2
3
Instruction Format
0 erd
0 erd
Store Data from MAC Register
3rd byte
4th byte
States
No. of
1*
1*

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