DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 134

• Manufacturer Part Number: DF2329BVTE25V
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2329BVTE25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2329BVTE25V

Section 2 Instruction Descriptions
2.2.32 (3)
INC (INCrement)
Operation
ERd + 1
ERd + 2
Assembly-Language Format
INC.L #1, ERd
INC.L #2, ERd
Operand Size
Longword
Description
This instruction adds the immediate value 1 or 2 to the contents of a 32-bit register ERd
(destination operand) and stores the result in the 32-bit register ERd.
Available Registers
ERd: ER0 to ER7
Operand Format and Number of States Required for Execution
Notes
An overflow is caused by the operations H'7FFFFFFF + 1
H'80000001, and H'7FFFFFFE + 2
Rev. 4.00 Feb 24, 2006 page 118 of 322
REJ09B0139-0400
Register direct
Register direct
Addressing
Mode
ERd
ERd
INC (L)
Mnemonic
INC.L
INC.L
Operands
#1, ERd
#2, ERd
H'80000000.
1st byte
0
0
B
B
Condition Code
H: Previous value remains unchanged.
N: Set to 1 if the result is negative; otherwise
Z: Set to 1 if the result is zero; otherwise
V: Set to 1 if an overflow occurs; otherwise
C: Previous value remains unchanged.
2nd byte
7
F
Instruction Format
cleared to 0.
cleared to 0.
cleared to 0.
—
I
0 erd
0 erd
H'80000000, H'7FFFFFFF + 2
UI H
—
—
3rd byte
—
U
N
4th byte
Z
V
Increment
—
States
No. of
C
1
1