DF2329BVTE25V Renesas Electronics America, DF2329BVTE25V Datasheet - Page 185

• Manufacturer Part Number: DF2329BVTE25V
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2329BVTE25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2329BVTE25V

2.2.50 (1)
PUSH (PUSH data)
Operation
Rn
Assembly-Language Format
PUSH.W Rn
Operand Size
Word
Description
This instruction saves data from a 16-bit register Rn onto the stack, tests the saved data, and sets
condition-code flags according to the result.
Available Registers
Rn: R0 to R7, E0 to E7
Operand Format and Number of States Required for Execution
Notes
1. PUSH.W Rn is identical to MOV.W Rn, @–SP.
2. When PUSH.W R7 or PUSH.W E7 is executed, the value saved on the stack is the R7 or E7
Addressing
value after effective address calculation (after ER7 is decremented by 2).
Mode
@–SP
—
PUSH (W)
Mnemonic
PUSH.W
Operands
Rn
1st byte
6
D
Condition Code
H: Previous value remains unchanged.
N: Set to 1 if the transferred data is negative;
Z: Set to 1 if the transferred data is zero;
V: Always cleared to 0.
C: Previous value remains unchanged.
2nd byte
F
Instruction Format
otherwise cleared to 0.
otherwise cleared to 0.
Rev. 4.00 Feb 24, 2006 page 169 of 322
—
I
rn
UI H
—
Section 2 Instruction Descriptions
—
3rd byte
—
U
N
Push Data on Stack
4th byte
REJ09B0139-0400
Z
V
0
—
States
No. of
C
3