DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 573
DF2266TF13V
Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2266TF20V.pdf
(712 pages)
Specifications of DF2266TF13V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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20.6.2
On-board programming/erasing of an individual flash memory block can also be performed in user
program mode by branching to a user program/erase control program. The user must prepare on-
board means for controlling FWE, on-board means of supplying programming data, and branching
conditions. The flash memory must contain the user program/erase control program or a program
that provides the user program/erase control program from external memory. As the flash memory
itself cannot be read during programming/erasing, transfer the user program/erase control program
to on-chip RAM, as in boot mode. Figure 20.7 shows a sample procedure for
programming/erasing in user program mode. Prepare a user program/erase control program in
accordance with the description in section 20.8, Flash Memory Programming/Erasing.
Figure 20.7 Programming/Erasing Flowchart Example in User Program Mode
Programming/Erasing in User Program Mode
Branch to user program/erase control
Transfer user program/erase control
Execute user program/erase control
Branch to flash memory application
program (flash memory rewrite)
program to RAM
program in RAM
Program/erase?
Reset-start
program
Yes
No
Branch to flash memory application
Rev. 5.00 Sep. 01, 2009 Page 521 of 656
program
REJ09B0071-0500
Section 20 ROM
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