M30833FJFP#U5 Renesas Electronics America, M30833FJFP#U5 Datasheet - Page 455

• Manufacturer Part Number: M30833FJFP#U5
• Description: IC M32C/83 MCU FLASH 100QFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30833FJFP#U5

• Core Processor: M32C/80
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 31K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-QFP
• For Use With: R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R
R
M
e
E
3
. v
J
Figure 26.4 V
2
0
1
9
C
3 .
B
8 /
0
1
3
0
Memory Expansion Mode and Microprocessor Mode
(with a wait state, when accessing an external memory and using the multiplexed bus)
Read Timing
CSi
ADi
/DBi
ADi
BHE
RD
CSi
ADi
/DBi
ADi
BHE
WR,WRL,
WRH
BCLK
ALE
BCLK
ALE
3
J
G
Write Timing (written in 2 cycles with no wait state)
4
a
0 -
n
o r
NOTES:
3 .
1
NOTES:
u
3
, 1
1. Varies with operation frequency:
p
1
2. Varies with operation frequency:
2
(
M
CC
0
t
t
t
t
t
t
t
t
t
t
d(AD-ALE)
h(ALE-AD)
h(WR-CS)
d(DB-WR)
d(AD-ALE)
h(ALE-AD)
ac3(RD-DB)
ac3(AD-DB)
0
d(BCLK-ALE)
d(BCLK-ALE)
3
t
6
d(AD-ALE)
=5V Timing Diagram (3)
18ns.max
18ns.max
2
t
d(AD-ALE)
C
t
d(BCLK-CS)
8 /
18ns.max
t
Page 430
t
t
18ns.max
d(BCLK-AD)
18ns.max
18ns.max
d(BCLK-CS)
d(BCLK-AD)
=(tcyc/2-10)ns.min, t
=(tcyc/2 x m-25)ns.min
, 3
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min, t
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min, t
t
ac3(AD-DB)
=(tcyc/2 x m-35)ns.max (m=3 with 2 wait states and m=5 with 3 wait states)
=(tcyc/2 x n-35)ns.max (n=5 with 2 wait states and n=7 with 3 wait states)
M
(2)
(1)
3
Address
Address
2
C
f o
t
8 /
h(BCLK-ALE)
t
t
t
-2ns.min
4
h(BCLK-ALE)
(1)
h(ALE-AD)
h(ALE-AD)
-2ns.min
3
8
) T
8
h(WR-DB)
h(WR-AD)
h(RD-AD)
(1)
(1)
t
t
d(BCLK-WR)
d(BCLK-RD)
18ns.max
18ns.max
t
dz(RD-AD)
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min, t
=(tcyc/2-10)ns.min
8ns.max
tcyc
tcyc
t
ac3(RD-DB)
t
d(DB-WR)
(1)
h(RD-CS)
(2)
t
t
su(DB-BCLK)
Data output
t
h(BCLK-WR)
h(BCLK-RD)
-5ns.min
-3ns.min
Measurement Conditions:
=(tcyc/2-10)ns.min
Data input
26ns.min
• V
• Input high and low voltage:
• Output high and low voltage:
CC
=4.2 to 5.5V
V
V
IH
OH
t
t
=2.5V, V
h(RD-CS)
h(WR-CS)
=2.0V, V
t
h(WR-DB)
t
t
h(WR-AD)
h(RD-AD)
t
h(RD-DB)
0ns.min
26. Electrical Characteristics
IL
(1)
OL
(2)
=0.8V
(2)
=0.8V
(1)
(2)
t
h(BCLK-AD)
t
t
-3ns.min
-3ns.min
t
-3ns.min
h(BCLK-CS)
h(BCLK-CS)
-3ns.min
h(BCLK-AD)
Vcc=5V
Address
Address