AT90USB162-16MU Atmel, AT90USB162-16MU Datasheet - Page 18

• Manufacturer Part Number: AT90USB162-16MU
• Description: MCU AVR USB 16K FLASH 32-QFN
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB162-16MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TQFN
• Controller Family/series: AVR USB
• No. Of I/o's: 22
• Eeprom Memory Size: 512Byte
• Ram Memory Size: 512Byte
• Cpu Speed: 16MHz
• Rohs Compliant: Yes
• Processor Series: AT90USBx
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI, USART, debugWIRE
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATSTK525, ATSTK526, ATAVRISP2, ATAVRONEKIT, AT90USBKEY, ATEVK525
• Minimum Operating Temperature: - 40 C
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details

Data Memory Access
Times
EEPROM Data
Memory
EEPROM Read/Write
Access
18
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
Figure 10. On-chip Data SRAM Access Cycles
The AT90USB82/162 contains 512 bytes of data EEPROM memory. It is organized as a sepa-
rate data space, in which single bytes can be read and written. The EEPROM has an endurance
of at least 100,000 write/erase cycles. The access between the EEPROM and the CPU is
described in the following, specifying the EEPROM Address Registers, the EEPROM Data Reg-
ister, and the EEPROM Control Register.
For a detailed description of SPI, debugWIRE and Parallel data downloading to the EEPROM,
see page 248, page 231, and page 236 respectively.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 2. A self-timing function, however, lets
the user software detect when the next byte can be written. If the user code contains instructions
that write the EEPROM, some precautions must be taken. In heavily filtered power supplies, V
is likely to rise or fall slowly on power-up/down. This causes the device for some period of time to
run at a voltage lower than specified as minimum for the clock frequency used. See “Preventing
EEPROM Corruption” on page 23. for details on how to avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
Address
clk
Data
Data
WR
CPU
RD
Compute Address
T1
Memory Access Instruction
Address valid
CPU
T2
cycles as described in Figure 10.
Next Instruction
T3
7707A–AVR–01/07
CC