AT90USB162-16MU Atmel, AT90USB162-16MU Datasheet - Page 240

• Manufacturer Part Number: AT90USB162-16MU
• Description: MCU AVR USB 16K FLASH 32-QFN
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB162-16MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TQFN
• Controller Family/series: AVR USB
• No. Of I/o's: 22
• Eeprom Memory Size: 512Byte
• Ram Memory Size: 512Byte
• Cpu Speed: 16MHz
• Rohs Compliant: Yes
• Processor Series: AT90USBx
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI, USART, debugWIRE
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATSTK525, ATSTK526, ATAVRISP2, ATAVRONEKIT, AT90USBKEY, ATEVK525
• Minimum Operating Temperature: - 40 C
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details

Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
Programming the
Flash
240
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in Table 39 on page 238 to “0000” and wait at least 100
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see Table 42 on page 238. When programming the Flash, the
program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte (Address bits 7..0)
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS2, BS1 to “00”. This selects the address low byte.
ns.
has been applied to RESET, will cause the device to fail entering programming mode.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
and GND.
(1)
memories plus Lock bits. The Lock bits are
7707A–AVR–01/07