AT90USB162-16MU Atmel, AT90USB162-16MU Datasheet - Page 249

• Manufacturer Part Number: AT90USB162-16MU
• Description: MCU AVR USB 16K FLASH 32-QFN
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB162-16MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TQFN
• Controller Family/series: AVR USB
• No. Of I/o's: 22
• Eeprom Memory Size: 512Byte
• Ram Memory Size: 512Byte
• Cpu Speed: 16MHz
• Rohs Compliant: Yes
• Processor Series: AT90USBx
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI, USART, debugWIRE
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATSTK525, ATSTK526, ATAVRISP2, ATAVRONEKIT, AT90USBKEY, ATEVK525
• Minimum Operating Temperature: - 40 C
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Details

Serial Programming
Algorithm
7707A–AVR–01/07
When programming the EEPROM, an auto-erase cycle is built into the self-timed programming
operation (in the Serial mode ONLY) and there is no need to first execute the Chip Erase
instruction. The Chip Erase operation turns the content of every memory location in both the
Program and EEPROM arrays into 0xFF.
Depending on CKSEL Fuses, a valid clock must be present. The minimum low and high periods
for the serial clock (SCK) input are defined as follows:
Low:> 2 CPU clock cycles for f
High:> 2 CPU clock cycles for f
When writing serial data to the AT90USB82/162, data is clocked on the rising edge of SCK.
When reading data from the AT90USB82/162, data is clocked on the falling edge of SCK. See
Figure 105 for timing details.
To program and verify the AT90USB82/162 in the serial programming mode, the following
sequence is recommended (See four byte instruction formats in Table 47):
1. Power-up sequence:
2. Wait for at least 20 ms and enable serial programming by sending the Programming
3. The serial programming instructions will not work if the communication is out of synchro-
4. The Flash is programmed one page at a time. The memory page is loaded one byte at a
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the con-
Apply power between V
tems, the programmer can not guarantee that SCK is held low during power-up. In this
case, RESET must be given a positive pulse of at least two CPU clock cycles duration
after SCK has been set to “0”.
Enable serial instruction to pin PDI.
nization. When in sync. the second byte (0x53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all four
bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
time by supplying the 7 LSB of the address and data together with the Load Program
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the address
lines 15..8. Before issuing this command, make sure the instruction Load Extended
Address Byte has been used to define the MSB of the address. The extended address
byte is stored until the command is re-issued, i.e., the command needs only to be issued
for the first page, since the memory size is not larger than 64KWord. If polling (
is not used, the user must wait at least t
Table 46.) Accessing the serial programming interface before the Flash write operation
completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
no 0xFFs in the data file(s) need to be programmed.
tent at the selected address at serial output PDO. When reading the Flash memory, use
the instruction Load Extended Address Byte to define the upper address byte, which is
not included in the Read Program Memory instruction. The extended address byte is
stored until the command is re-issued, i.e., the command needs only to be issued for the
first page, since the memory size is not larger than 64KWord.
WD_EEPROM
before issuing the next byte. (See Table 46.) In a chip erased device,
CC
ck
and GND while RESET and SCK are set to “0”. In some sys-
ck
< 12 MHz, 3 CPU clock cycles for f
< 12 MHz, 3 CPU clock cycles for f
WD_FLASH
before issuing the next page. (See
ck
ck
>= 12 MHz
>= 12 MHz
RDY/BSY
)
249