MC9S08SH16MTG Freescale Semiconductor, MC9S08SH16MTG Datasheet - Page 290

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MC9S08SH16MTG

Manufacturer Part Number
MC9S08SH16MTG
Description
MCU 8BIT 16K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08SH16MTG

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-TSSOP
Core
S08
Processor Series
MC9S08Sxx
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Data Ram Size
1 KB
On-chip Adc
Yes
Number Of Timers
3
Operating Supply Voltage
2.7 V to 5.5 V
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
8
Height
1.05 mm
Interface Type
SCI, SPI, I2C
Length
5 mm
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
4.4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Appendix A Electrical Characteristics
The average chip-junction temperature (T
where:
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving
290
D
(at equilibrium) for a known T
I/O
T
θ
P
P
P
JA
D
int
I/O
A
is neglected) is:
Equation A-1
= Ambient temperature, °C
= P
Equation A-1
= Package thermal resistance, junction-to-ambient, °C/W
= I
= Power dissipation on input and output pins — user determined
int
DD
+ P
× V
I/O
DD
, Watts — chip internal power
and
and
I/O
Equation A-2
Equation A-2
<< P
K = P
int
A
and can be neglected. An approximate relationship between P
MC9S08SH32 Series Data Sheet, Rev. 2
. Using this value of K, the values of P
D
P
T
× (T
D
J
iteratively for any value of T
for K gives:
= K ÷ (T
J
= T
A
) in °C can be obtained from:
+ 273°C) + θ
A
PRELIMINARY
+ (P
J
D
+ 273°C)
× θ
JA
JA
)
× (P
D
)
2
A
.
D
and T
J
can be obtained by
Freescale Semiconductor
D
Eqn. A-1
Eqn. A-2
Eqn. A-3
and T
J

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