MC9S08SH16MTG Freescale Semiconductor, MC9S08SH16MTG Datasheet - Page 47

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MC9S08SH16MTG

Manufacturer Part Number
MC9S08SH16MTG
Description
MCU 8BIT 16K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08SH16MTG

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
16-TSSOP
Core
S08
Processor Series
MC9S08Sxx
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Data Ram Size
1 KB
On-chip Adc
Yes
Number Of Timers
3
Operating Supply Voltage
2.7 V to 5.5 V
Operating Temperature Range
- 40 C to + 125 C
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
8
Height
1.05 mm
Interface Type
SCI, SPI, I2C
Length
5 mm
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
4.4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
4.5.1
Features of the FLASH memory include:
4.5.2
Before any program or erase command can be accepted, the FLASH clock divider register (FCDIV) must
be written to set the internal clock for the FLASH module to a frequency (f
200 kHz (see
once, so normally this write is done during reset initialization. FCDIV cannot be written if the access error
flag, FACCERR in FSTAT, is set. The user must ensure that FACCERR is not set before writing to the
FCDIV register. One period of the resulting clock (1/f
program and erase pulses. An integer number of these timing pulses are used by the command processor
to complete a program or erase command.
Table 4-5
of FCLK (f
of cycles of FCLK and as an absolute time for the case where t
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
Freescale Semiconductor
FLASH size
— MC9S08SH32: 32,768 bytes (64 pages of 512 bytes each)
— MC9S08SH16: 16,384 bytes (32 pages of 512 bytes each)
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection and vector redirection
Security feature for FLASH and RAM
Auto power-down for low-frequency read accesses
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
Program and Erase Times
FCLK
Features
Section 4.7.1, “FLASH Clock Divider Register
Byte program
Byte program (burst)
Page erase
Mass erase
1
). The time for one cycle of FCLK is t
Excluding start/end overhead
Parameter
Table 4-5. Program and Erase Times
MC9S08SH32 Series Data Sheet, Rev. 2
PRELIMINARY
Cycles of FCLK
20,000
4000
9
4
FCLK
FCLK
) is used by the command processor to time
= 1/f
(FCDIV)”). This register can be written only
FCLK
FCLK
Time if FCLK = 200 kHz
= 5 μs. Program and erase times
. The times are shown as a number
FCLK
100 ms
20 μs
20 ms
45 μs
) between 150 kHz and
1
Chapter 4 Memory
47

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