D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 173

• Manufacturer Part Number: D12312SVTEBL25
• Description: IC H8S MCU ROMLESS 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTEBL25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTEBL25; HD6412312SVTEBL25

2.2.44 (3)
NEG (NEGate)
Operation
0 – ERd
Assembly-Language Format
NEG.L ERd
Operand Size
Longword
Description
This instruction takes the two’s complement of the contents of a 32-bit register ERd (destination
operand) and stores the result in the 32-bit register ERd (subtracting the register contents from
H'00000000). If the original contents of ERd were H'80000000, however, the result remains
H'80000000.
Available Registers
ERd: ER0 to ER7
Operand Format and Number of States Required for Execution
Notes
An overflow occurs if the original contents of ERd were H'80000000.
Register direct
Addressing
Mode
ERd
NEG (L)
Mnemonic
NEG.L
Operands
ERd
1st byte
1
7
Condition Code
H: Set to 1 if there is a borrow at bit 27;
N: Set to 1 if the result is negative; otherwise
Z: Set to 1 if the result is zero; otherwise
V: Set to 1 if an overflow occurs; otherwise
C: Set to 1 if there is a borrow at bit 31;
2nd byte
B
Instruction Format
otherwise cleared to 0.
cleared to 0.
cleared to 0.
cleared to 0.
otherwise cleared to 0.
Rev. 4.00 Feb 24, 2006 page 157 of 322
—
I
0 erd
UI H
—
Section 2 Instruction Descriptions
3rd byte
—
U
Negate Binary Signed
N
4th byte
REJ09B0139-0400
Z
V
States
No. of
C
1