D12312SVF20V Renesas Electronics America, D12312SVF20V Datasheet - Page 702

IC H8S/2312S MCU ROMLESS 100QFP

D12312SVF20V

Manufacturer Part Number
D12312SVF20V
Description
IC H8S/2312S MCU ROMLESS 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVF20V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVF20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
17.19
All interrupts, including NMI input, are disabled when flash memory is being programmed or
erased (when the P1 or E1 bit is set in FLMCR1, or the P2 or E2 bit is set in FLMCR2), and while
the boot program is executing in boot mode *
There are three reasons for this:
1. Interrupt during programming or erasing might cause a violation of the programming or
2. In the interrupt exception handling sequence during programming or erasing, the vector would
3. If an interrupt occurred during boot program execution, it would not be possible to execute the
For these reasons, in on-board programming mode alone there are conditions for disabling
interrupts, as an exception to the general rule. However, this provision does not guarantee normal
erasing and programming or MCU operation. All requests, including NMI, must therefore be
restricted inside and outside the MCU when programming or erasing flash memory. The NMI
interrupt is also disabled in the error-protection state while the P1 or E1 bit remains set in
FLMCR1, or the P2 or E2 bit remains set in FLMCR2.
Notes: 1. Interrupt requests must be disabled inside and outside the MCU until the programming
Rev.7.00 Feb. 14, 2007 page 668 of 1108
REJ09B0089-0700
erasing algorithm, with the result that normal operation could not be assured.
not be read correctly *
normal boot mode sequence.
2. A RAM area cannot be erased by execution of software in accordance with the erase
3. Block area EB0 includes the vector table. When performing RAM emulation, the
2. The vector may not be read correctly in this case for the following two reasons:
Interrupt Handling when Programming/Erasing Flash Memory
the P2 or E2 bit in FLMCR2 will not cause a transition to program mode or erase
mode. When actually programming a flash memory area, the RAMS bit should be
cleared to 0.
algorithm while flash memory emulation in RAM is being used.
vector table is needed by the overlap RAM.
control program has completed programming.
If flash memory is read while being programmed or erased (while the P1 or E1 bit
is set in FLMCR1, or the P2 or E2 bit is set in FLMCR2), correct read data will not
be obtained (undetermined values will be returned).
If the interrupt entry in the vector table has not been programmed yet, interrupt
exception handling will not be executed correctly.
2
, possibly resulting in MCU runaway.
1
, to give priority to the program or erase operation.

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