D12312SVF20V Renesas Electronics America, D12312SVF20V Datasheet - Page 884

• Manufacturer Part Number: D12312SVF20V
• Description: IC H8S/2312S MCU ROMLESS 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVF20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 20 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
Rev.7.00 Feb. 14, 2007 page 850 of 1108
REJ09B0089-0700
2. Programming time per 128 bytes. (In the H8S/2318, H8S/2317, H8S/2315, and
3. Time to erase one block. (In the H8S/2318, H8S/2317, H8S/2315, and H8S/2314,
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
7. Minimum number of times for which all characteristics are guaranteed after rewriting
8. Reference value for 25°C (as a guideline, rewriting should normally function up to this
9. Data retention characteristic when rewriting is performed within the specification range,
The wait time after P bit setting (z) should be changed as follows according to the
Number of writes (n)
H8S/2314, indicates the total time during which the P bit in flash memory control
register 1 (FLMCR1) is set. In the H8S/2319, indicates the total time during which the
P1 bit and P2 bit in the flash memory control registers (FLMCR1, FLMCR2) are set.
Does not include the program-verify time.)
indicates the total time during which during which the E1 bit in FLMCR1 and the E2 bit
in FLMCR2 are set. Does not include the erase-verify time.)
actual set value of z so as not to exceed the maximum programming time (t
number of writes (n).
[In additional programming]
Number of writes (n)
wait time after E bit setting (z) and the maximum number of erases (N):
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
P
E
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
(max) =
i=1
Σ
N
wait time after P bit setting (z)
z = 30 μs
z = 200 μs
z = 10 μs
E
(max)), the following relationship applies between the
P
(max)).