DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 256

IC H8S MCU FLASH 384K 120TQFP

DF2367VTE33

Manufacturer Part Number
DF2367VTE33
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2367VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VTE33
HD64F2367VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
Idle Cycle in Case of DRAM Space Access after Normal Space Access: In a DRAM space
access following a normal space access, the settings of bits ICIS2, ICIS1, ICIS0, and IDLC in
BCR are valid. However, in the case of consecutive reads in different areas, for example, if the
second read is a full access to DRAM space, only a T
timing in this case is shown in figure 6.48.
Rev.6.00 Mar. 18, 2009 Page 196 of 980
REJ09B0050-0600
Address bus
CS (area A)
CS (area B)
Figure 6.47 Relationship between Chip Select (CS) and Read (RD)
RD
Figure 6.48 Example of DRAM Full Access after External Read
Overlap period between CS (area B)
and RD may occur
φ
Address bus
(a) No idle cycle insertion
Data bus
T
(ICIS1 = 0)
1
Bus cycle A
RD
φ
T
2
T
3
Bus cycle B
T
T
1
1
External read
T
T
2
2
(CAST = 0)
Address bus
CS (area A)
CS (area B)
T
3
p
T
RD
cycle is inserted, and a T
p
φ
DRAM space read
T
r
T
(b) Idle cycle insertion
1
Bus cycle A
(ICIS1 = 1, initial value)
T
T
c1
2
T
T
3
c2
Idle cycle
T
i
Bus cycle B
i
cycle is not. The
T
1
T
2

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