DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 812

IC H8S MCU FLASH 384K 120TQFP

DF2367VTE33

Manufacturer Part Number
DF2367VTE33
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2367VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VTE33
HD64F2367VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 752 of 980
REJ09B0050-0600
(Program end notice)
2
4
Wait for program data
programming/erasing
(reset by boot mode)
Boot mode initiation
setting command
Figure 20.8 Overview of Boot Mode State Transition Diagram
Wait for inquiry
3
command
Wait for
user boot MAT erasure
(Program command reception)
(Erasure end selection
command reception)
All user MAT and
(Program data transmission)
H'00.......H'00 reception
Inquiry command response
(Bit rate adjustment)
Inquiry command reception
Read/check command
reception
H'00 transmission
(adjustment completed)
Command response
(Erasure selection command reception)
read/check command
Bit rate adjustment
Wait for erase-block
Processing of
inquiry setting
Processing of
command
data
(Erase-block specification)
1

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