DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 821

• Manufacturer Part Number: DF2367VTE33
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VTE33; HD64F2367VTE33

16. Determine the FPFR (general-purpose register R0L) value returned by the programming
17. After programming finishes, clear FKEY and specify software protection.
⎯ Programming finished processing should be poerformed immediately after programming of
program.
If this LSI is restarted by a power-on reset immediately after user MAT programming has
finished, secure a reset period (period of RES = 0) that is at least as long as normal 100 μs.
Programming finished area
the necessary data has completed. Caution is necessary because if an operation such as
initialization processing, internal program downloading, rewriting an area of RAM that is a
download destination, or MAT switching is performed before programming finished
processing, programming will not take place correctly.
:
:
EB9
EB10
EB11
EB12
Before reprogramming erased blocks containing a programming
finished area (EB10 and EB11), the corresponding erased
blocks (EB10 and EB11) should be erased.
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 761 of 980
REJ09B0050-0600