DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 829

• Manufacturer Part Number: DF2367VTE33
• Description: IC H8S MCU FLASH 384K 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VTE33; HD64F2367VTE33

8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 20.7 Executable MAT
Note:
Operation
Programming
Erasing
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
*
Programming/Erasing is possible to user MATs.
Initiated Mode
User Program Mode
Table 20.8 (1)
Table 20.8 (2)
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 769 of 980
User Boot Mode*
Table 20.8 (3)
Table 20.8 (4)
REJ09B0050-0600