DF2367VTE33 Renesas Electronics America, DF2367VTE33 Datasheet - Page 779

IC H8S MCU FLASH 384K 120TQFP

DF2367VTE33

Manufacturer Part Number
DF2367VTE33
Description
IC H8S MCU FLASH 384K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2367VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2367VTE33
HD64F2367VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Mode pin
Legend:
FCCS:
FPCS:
FECS:
FKEY:
FMATS: Flash MAT select register
FTDAR: Flash transfer destination address register
FVACR: Flash vector address control register
Notes:
To read from or write to the registers, the FLSHE bit in the system control
register (SYSCR) must be set to 1.
* 384 kbytes, 256 kbytes
Flash code control status register
Flash program code select register
Flash erase code select register
Flash key code register
FMATS
FTDAR
FVACR
FCCS
FPCS
FECS
FKEY
Figure 20.1 Block Diagram of Flash Memory
Operating
mode
Internal data bus (16 bits)
Control unit
Internal address bus
Flash memory
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 719 of 980
User MAT: 512 kbytes *
User boot MAT: 8 kbytes
Memory MAT unit
REJ09B0050-0600

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