UPD70F3744GJ-GAE-AX Renesas Electronics America, UPD70F3744GJ-GAE-AX Datasheet - Page 775
UPD70F3744GJ-GAE-AX
Manufacturer Part Number
UPD70F3744GJ-GAE-AX
Description
MCU 32BIT V850ES/JX3 144-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3r
Datasheet
1.UPD70F3743GJ-GAE-AX.pdf
(911 pages)
Specifications of UPD70F3744GJ-GAE-AX
Core Processor
RISC
Core Size
32-Bit
Speed
32MHz
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
128
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
2.85 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3744GJ-GAE-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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V850ES/JJ3
CHAPTER 27 FLASH MEMORY
27.5 Rewriting by Self Programming
27.5.1 Overview
The V850ES/JJ3 supports a flash macro service that allows the user program to rewrite the internal flash memory by
itself. By using this interface and a self programming library that is used to rewrite the flash memory with a user
application program, the flash memory can be rewritten by a user application transferred in advance to the internal RAM or
external memory. Consequently, the user program can be upgraded and constant data can be rewritten in the field.
Figure 27-15. Concept of Self Programming
Application program
Self programming library
Flash function execution Flash information
Flash macro service
Erase, write
Flash memory
R01UH0016EJ0400 Rev.4.00
Page 759 of 892
Sep 30, 2010
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