HD6473837H Renesas Electronics America, HD6473837H Datasheet - Page 144

IC H8 MCU OTP 60K 100QFP

HD6473837H

Manufacturer Part Number
HD6473837H
Description
IC H8 MCU OTP 60K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Lr
Datasheet

Specifications of HD6473837H

Core Processor
H8/300L
Core Size
8-Bit
Speed
5MHz
Connectivity
SCI
Peripherals
LCD, PWM
Number Of I /o
84
Program Memory Size
60KB (60K x 8)
Program Memory Type
OTP
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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6.6
Reliability of Programmed Data
A highly effective way of assuring data retention characteristics after programming is to screen the
chips by baking them at a temperature of 150°C. High-temperature baking is a screening method
that quickly eliminates PROM memory cells prone to initial data retention failure.
Figure 6.10 shows a flowchart of this screening procedure.
Write program and verify contents
Bake at high temperature with power off
125 C to 150 C, 24 hrs to 48 hrs
Read and check program
Install
Figure 6.10 Recommended Screening Procedure
If write errors occur repeatedly while the same PROM programmer is being used, stop
programming and check for problems in the PROM programmer and socket adapter, etc.
Please notify your Hitachi representative of any problems occurring during programming or in
screening after high-temperature baking.
127

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