FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 42

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9. Power Loss and Dissipation
9.1 Power Loss of SPM
IGBTs and FRDs. The loss during the turn-off steady state can be ignored because it is very small amount
and has little effect on increasing the temperature in the device. The conduction loss depends on the dc
electrical characteristics of the device i.e. saturation voltage. Therefore, it is a function of the conduction
current and the device’s junction temperature. On the other hand the switching loss is determined by the
dynamic characteristics like turn-on/off time and over-voltage/current. Hence, in order to obtain the accurate
switching loss, we should consider the DC-link voltage of the system, the applied switching frequency and
the power circuit layout in addition to the current and temperature.
shown to calculate both losses of the Mini DIP SPM. They are for the case that 3-phase continuous
sinusoidal PWM is adopted. For other cases like 3-phase discontinuous PWMs, please refer to the paper
"Minimum-Loss Strategy for three-Phase PWM Rectifier, IEEE Transactions on Industrial Electronics, Vol. 46,
No. 3, June, 1999 by Dae-Woong Chung and Seung-Ki Sul”.
9.1.1 Conduction Loss
for the IGBT and the diode, respectively.
to be sinusoidal. That is,
conduction loss of one IGBT and diode can be obtained as follows.
2008-03-03
The total power losses in the Mini DIP SPM are composed of conduction and switching losses in the
In this chapter, based on a PWM-inverter system for motor control applications, detailed equations are
The typical characteristics of forward drop voltage are approximated by the following linear equation
Assuming that the switching frequency is high, the output current of the PWM-inverter can be assumed
Where φ is the phase-angle difference between output voltage and current. Using equations (9.1), the
V
R
I
I
= Threshold voltage of IGBT
= on-state slope resistance of IGBT
v
v
i
I
D
=
=
=
I
V
peak
V
I
D
+
cos(
+
R
R
I
D
θ
⋅
i
⋅
−
i
φ
)
V4 Mini DIP SPM Application Note (2008-03-03)
42
V
FAIRCHILD SEMICONDUCTOR - Smart Power Module
R
D
D
= Threshold voltage of diode
= on-state slope resistance of diode
(9.1)
(9.2)