FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 44

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

considered a constant approximately.
and the switching loss occurs every PWM period in the continuous PWM schemes. Therefore, depending on
the switching frequency of
E
it should be noted that the switching losses are a linear function of current and directly proportional to the
switching frequency.
9.2 Thermal Impedance
9.2.1 Overview
increases, the operating characteristics of a device are altered from normal, and the failure rate increases
exponentially. This makes the thermal design of the package a very important factor in the device
development stage, and also in an application field.
which is defined as the difference in temperature between two closed isothermal surfaces divided by the total
heat flow between them. For semiconductor devices, two temperatures are junction temperature, T
reference temperature, T
operation. The selection of a reference point is arbitrary, but usually the hottest spot on the back of a device
on which a heat sink is attached is chosen. This is called junction-to-case thermal resistance, R
reference point is an ambient temperature, this is called junction-to-ambient thermal resistance, R
thermal resistances are used for the characterization of a device’s thermal performance. R
for heat sink carrying devices while R
flow from junction-to-ambient for the SPM including a heat sink. The dotted component of R
ignored due to its large value.
2008-03-03
I
value.
As mentioned in the above equation (9.2), the output current can be considered a sinusoidal waveform
where
Semiconductor devices are very sensitive to junction temperature, i.e., as the junction temperature
To gain insight into the device’s thermal performance, it is normal to introduce thermal resistance,
P
=
sw
(
E
E
D
=
I
E
is one for diode. Those should be derived by experimental measurement. From equation (9.10),
2
+
1
I
π
is a unique constant of IGBT related to the switching energy and different IGBT has different
E
−
2
D
π
2
π
2
π
∫
+
)
+
φ
(
φ
f
E
sw
I
I
+
peak
x
, and the amount of heat flow is equal to the power dissipation of a device during
f
E
SW
D
−
π
2
, the switching loss of one device is the following equation (9.10).
π
)
2
∫
+
+
φ
cos(
φ
i
f
sw
θ
d
θ ja
φ
−
φ
is used in other cases. Figure 9.1 shows a thermal network of heat
)
d
φ
=
(
V4 Mini DIP SPM Application Note (2008-03-03)
E
I
+
44
E
FAIRCHILD SEMICONDUCTOR - Smart Power Module
D
π
)
f
sw
I
peak
θ jc
is usually used
θ jc
θ ja
. When the
θ ca
. Both the
(9.10)
can be
j
and