FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 43

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

dc link voltage). Finally, the integration of equation (9.3) and (9.4) gives
9.1.2 Switching Loss
voltage/current and the operating temperature/frequency. However, the turn-on/off loss energy (Joule) can be
experimentally measured indirectly by multiplying the current and voltage and integrating over time, under a
given circumstance. Therefore the linear dependency of a switching energy loss on the switched-current is
expressed during one switching period as follows.
2008-03-03
where ξ is the duty cycle in the given PWM method.
where MI is the PWM modulation index (MI, defined as the peak phase voltage divided by the half of
It should be noted that the total inverter conduction losses are six times of the P
Different devices have different switching characteristics and they also vary according to the handled
where,
Swtitching
E
E
I
D
ξ
P
P
=
=
con
con
=
E
P
E
E
.
.
I
D
1
I
con
=
I
D
.
+
i
=
ON
=
.
ON
I
is the switching loss energy of the IGBT and
=
MI
2
V
peak
V
π
+
I
P
energy
D
2
+
2
I
2
con
E
π
cos
I
peak
E
π
(
peak
I
V
.
.
I
D
OFF
I
θ
.
+
OFF
−
+
π
2
π
−
2
π
∫
P
2
+
π
V
2
+
∫
φ
+
loss
ξ
con
φ
+
φ
D
1 (
φ
cos(
.
)
D
−
+
=
ξ
(
I
θ
E
)
peak
8
cos(
I
−
+
φ
(
E
)
V
θ
d
D
I
θ
)
−
−
×
φ
+
V
i
)
R
D
V4 Mini DIP SPM Application Note (2008-03-03)
d
θ
)
[
I
MI
I
2
joule
+
π
peak
43
R
cos
FAIRCHILD SEMICONDUCTOR - Smart Power Module
2
]
D
−
2
I
π
2
π
φ
π
2
∫
peak
+
+
φ
ξ
+
φ
cos
2
I
−
peak
π
2
π
8
2
∫
+
2
+
φ
1 (
φ
E
(
2
θ
D
(
−
−
R
i
ξ
φ
I
is for the diode
)
+
)
cos
d
R
θ
D
2
)
(
θ
+
−
I
φ
peak
3
π
)
con
d
2
θ
.
. E
(
R
I
I
−
and E
R
D
)
MI
D
can be
cos
(9.3)
(9.4)
(9.5)
(9.6)
(9.7)
(9.8)
(9.9)
φ