FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 49

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

temperature. The TSP sampling pulse must provide a sense current equal to that used during the calibration
procedure for obtaining equation (9.14). While monitoring the TSP, adjust the applied power so as to insure a
sufficient rise in T
temperature will generate enough temperature difference to ensure a good measurement resolution. A
typical example is shown in Fig. 9.5.
junction prior to re-applying power. The power and sensing pulse train shown in Fig. 9.5 has a duty cycle of
99.9%, which for all practical purposes is considered to be continuous power. Obviously, most of the total
power is applied to the DUT in Fig. 9.6.
power P is recorded. Using the measured values and equation (9.11), the junction-to-case thermal resistance
R
that is, mounted with an infinite or temperature-controlled heat sink.
heat sink having a large heat carrying capacity. Thermal grease is applied between the SPM and heat sink to
prevent an air gap.
2008-03-03
θ
jc
can be estimated. R
The TSP sampling time must be very short so as not to allow for any appreciable cooling of the
Figure 9.7 shows the thermal resistance measurement environment for SPMs. The SPM is placed on a
Once T
Figure 9.5 Example of a power and sample pulses train during the R
Heating
Power
j
reaches thermal equilibrium, its value along with the reference temperature T
j
. Adjusting the applied power to achieve a T
θ
jc
80ms
here indicates the ability of a device to dissipate power in an ideal environment,
Train of heating pulse with 80ms interval and
sensing pulses with 100us is given typically
V4 Mini DIP SPM Application Note (2008-03-03)
100us
49
FAIRCHILD SEMICONDUCTOR - Smart Power Module
j
increase of about 100 ℃ above the reference
jc
measurement of a SPM-IGBT
Time
c
and applied