BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 36

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BLF7G22LS-160,112

Manufacturer Part Number
BLF7G22LS-160,112
Description
TRANS LDMOS SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G22LS-160,112

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1.6.7 Medical Imaging
Application diagram
Recommended products
38
Function
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
driver
driver
driver
final
final
final
final
NXP Semiconductors RF Manual 14
Type
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
Gradient coils
Magnet
RF coils
ELECTRONICS
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
(MHz)
f
RF
range
th
edition
1200
100
300
400
100
120
20
P
W
L
RF amplifier
X GRADIENT
Y GRADIENT
Z GRADIENT
AMPLIFIER
AMPLIFIER
AMPLIFIER
ADC
27.5
27.2
26.5
dB
G
21
21
24
18
p
GENERATOR
WAVEFORM
COMPUTER
DISPLAY
IMAGE
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Very consistent device performance
brb434

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