BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 73

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-channel junction field-effect transistors for general RF applications
Bold = Highly recommended product
(1)
DC, LF and HF amplifiers
Pre-amplifiers for AM tuners in car radios
RF stages FM portables, car radios, main radios & mixer stages
Low-level general purpose amplifiers
General-purpose amplifiers
AM input stages UHF/VHF amplifiers
Type
BF245A
BF245B
BF245C
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BF862
BF510
BF511
BF512
BF513
BFR30
BFR31
BFT46
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
Asymmetrical
(1)
(1)
(1)
(1)
Package
SOT54
SOT54
SOT54
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
max
V
(V)
30
30
30
30
30
30
30
30
30
25
25
25
20
20
20
20
20
25
25
25
25
25
25
25
DS
(mA)
max
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
50
50
50
50
I
5
5
5
G
min
0.7
2.5
0.2
24
24
12
12
11
12
10
10
12
12
2
6
2
6
3
6
2
6
6
4
1
(mA)
I
DSS
max
6.5
6.5
6.5
1.5
15
25
15
25
13
18
15
25
25
12
18
10
60
30
60
60
7
3
7
5
min
0.4
0.4
0.4
0.5
0.5
0.5
0.2
0.5
0.8
0.3
1
1
2
2
typ. 0.8
typ. 2.2
typ. 1.5
typ. 3
V
<2.5
<1.2
(V)
<8
<8
<8
<5
gsoff
CHARACTERISTICS
max
1.0
1.5
6.5
6.5
6.5
7.5
7.5
7.5
7.5
7.5
7.5
2
2
4
min
4.5
4.5
4.5
1.5
12
16
20
35
3
3
3
3
3
3
1
|Yfs|
(mS)
>10
>10
>10
2.5
>1
10
4
6
7
max
6.5
6.5
6.5
6.5
6.5
6.5
4.5
20
25
30
4
-
-
-
-
Typ.=1.1
Typ.=1.1
Typ.=1.1
typ=1.9
min
0.8
0.8
0.8
0.8
0.8
0.8
0.4
0.4
0.4
0.4
2.1
2.1
2.1
1.5
1.5
1.5
1.3
1.3
1.3
1.3
(pF)
C
rs
max
2.7
2.7
2.7
0.5
0.5
0.5
0.5
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
NXP Semiconductors RF Manual 14
th
edition
75