BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 71

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiGe:C MMICs Variable Gain Amplifiers
SiGe:C MMIC LNA's for wireless infrastructures
3.4.2 Low noise LO generators for VSAT and general microwave applications
Why choose NXP Semiconductors’ low noise LO generators
` Lowest total cost of ownership
` Alignment free concept
` Easy circuit design-in
` Improved LO stability
Low noise LO generators for VSAT applications
Low noise LO generators for general microwave applications
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red
BGA7350 and BGA7351 are dual VGA products. The VGA function is twice on the chip.
BGA7350 and BGA7351 are designed for receiving.
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red
TFF1003HN
TFF1007HN*
TFF11070HN*
TFF11073HN*
TFF11077HN*
TFF11080HN*
TFF11084HN*
TFF11088HN*
TFF11092HN*
TFF11096HN*
TFF11101HN*
TFF11105HN*
TFF11110HN*
TFF11115HN*
TFF11121HN*
TFF11126HN*
TFF11139HN*
TFF11145HN*
TFF11152HN*
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
BGU7051*
BGU7052*
BGU7053*
BGU7054*
Type
Type
Type
Type
= New, highly recommended product
= New, highly recommended product
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
Package
Package
SOT616
SOT616
Package
Package
SOT650
SOT650
SOT650
SOT650
SOT617
SOT617
SOT617
SOT617
SOT617
38 - 644
48 - 809
53 - 886
27 - 448
28 - 468
29 - 490
32 - 537
34 - 562
35 - 588
37 - 616
40 - 674
42 - 706
44 - 738
46 - 773
55 - 927
58 - 970
31 - 513
230.46~234.38
f
MHz
IN(REF)
Control interface
50~815
Vsupply (typ) @ I
f
MHz
Parallel, digital
Parallel, digital
IN(REF)
Parallel, serial
Analog
Analog
(V)
3.3
3.3
3.3
3.3
Typ
V
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
V
CC
Typ
V
(mA)
3.3
3.3
V
CC
65
65
65
65
C
Typ
mA
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
=
I
CC
Vsup
(MHz)
(V)
@ f =
1900
2500
3500
5
5
5
5
900
5
Typ
mA
100
100
I
@ 100 kHz @ 10 MHz
CC
dBc/Hz
PLL phase noise @
-95
-95
-95
-95
-95
-95
-95
-95
Gass (typ) NF (typ) P
-95
-95
-95
-95
-95
-95
-95
-95
-95
(dB)
20.9
20.1
20
20
(mA)
Isup
N=64
160
240
240
710
710
PLL phase noise @ N=64,
dBc/Hz
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
@100 kHz
dBc/Hz
(dB)
0.7
0.9
1.1
1
Max
1450 … 2200
2100 … 2750
-104
700 … 1450
700 … 2750
-92
frequency
50 … 250
(MHz)
12.36
13.54
14.83
10.31
10.79
11.29
11.81
14.17
GHz
6.84
8.21
8.59
8.99
(dBmW)
Min
7.49
7.84
9.41
9.85
L(1dB)
7.16
17.8
18
18
18
(typ) OIP3 (typ)
fo(RF)
10.07
10.54
11.03
11.55
12.09
12.65
13.85
14.50
15.18
GHz
8.40
12.8~13.05
7.00
7.33
7.67
8.02
8.79
9.20
9.63
range
PLL
Typ
Gain
14.75~15
(dB)
31.5
27
27
27
24
28
(GHz)
(dBm)
f
PLL
35.5
o(RF)
34
35
35
NXP Semiconductors RF Manual 14
@ minimum attenuation @ maximum attenuation
Gain
(dB)
10.31
10.79
11.29
12.36
12.94
14.83
15.52
18.5
18.5
11.81
14.17
Max
GHz
7.84
8.21
8.59
8.99
9.85
7.16
7.49
9.41
24
24
24
24
(dB)
IRL
22
20
20
20
dBm
Typ
Po
-5
-3
Output buffer
(dBm)
OIP3
45
45
45
37
-
-
ORL
(dB)
15.8
dBm
Output buffer
Typ
15
15
15
Po
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
-5
RL
(dB)
NF
6.5
6.5
6.5
6.5
Max
RLout(RF)
6
6
dB
-10
-10
out(RF)
Max
-10
-10
-10
-10
-10
-10
-10
-10
dB
-10
-10
-10
-10
-10
-10
-10
-10
-10
Gain
(dB)
-5.5
-7.5
-9.5
-3
-3
-3
Input
dBm
Min
Input
th
dBm
-10
-10
Min
S
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
edition
S
i
(dBm)
OIP3
i
23.5
23.5
23.5
19
50
50
(dB)
33.5
33.5
33.5
NF
38
30
34
73