BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 57

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

We were the first semiconductor company to supply S-band
transistors (2700 - 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we currently develop new high
power and high-bandwidth technologies based on gallium
nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process QUBiC
that is available in several variants with f
specialized to address specific small signal RF applications.
The product portfolio encompasses:
Coming from a component background, NXP now also focuses
on architectural breakthroughs by highly integrated products
for microwave and millimeter wave. One example is a family of
LO Generators from 7G Hz to 15 GHz with integrated
Phase-Locked Loop and Voltage Controlled Oscillator.
Another example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W. Both products are highlighted in the
following:
RF small signal product highlight:
LO generators TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators are low-power, low-spurious solutions that simplify
design-in and lower the total cost of ownership.
2.12
NXP, your partner in High Performance microwave applications
NXP has a 50+ years history in semiconductor technology and component design. For more
than 3 decades we are leading in providing high performance RF technologies for microwave
applications. The company has built a strong position in the field of RF small signal and power
transistors for microwave amplifiers with a solid and growing, and best-in-class Si devices and
processing technologies.
- Low noise amplifiers (LNA)
- Variable gain amplifiers (VGA)
- Mixers,
- Local oscillators (LO)
- LO Generators
Microwave / Radar
T
up to 200 GHz, each
Features
` Lowest noise LO generators for 7 to 15 GHz range
` Maximum power consumption for all types, typical 330 mW
` Phase-noise compliant with IESS-308 (Intelsat)
` Proven QUBiC4X SiGe:C technology (120 GHz f
` External loop filter
` Differential input and output
` Lock-detect output
` Internally stabilized voltage reference for loop filter
RF Power product highlight !
The BLS6G2933P-200 is the first LDMOS based, industry
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
NXP Semiconductors RF Manual 14
th
T
edition
process)
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