BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 52

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.9
Best in class PA designs enable considerable energy savings
NXP’s latest power amplifier designs enable wireless infrastructure to run with significantly higher
energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies
currently possible, NXP combines its latest generations LDMOS technology (Gen6 & 7) with the
Doherty concept. This way, the optimized intrinsic performance of our LDMOS technology combines
perfectly with the extrinsic Doherty technology into very efficient, high gain, readily linearizable, and
lower operation cost power amplifiers.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely dormant because
the dominant mobile communication system modulation techniques (FM, GMSK and EDGE) did
not require high peak-to-average ratio (PAR) signals. However, the high power added efficiency
architecture of the Doherty amplifier has made it the preferred option for today's service providers
for base stations transmitting 3G, 4G or multi-carrier standards.
NXP’s Doherty amplifiers ensure high-efficiency while maintaining a very similar peak power
capability of two transistors combined. The input and output sections are internally matched,
benefiting the amplifier designs with high gain and good gain flatness and phase linearity over a
wide frequency band.
Integrated Doherty
NXP can even offer the world’s first fully integrated Doherty
designs: From the outside these devices look like an ordinary
transistor. In fact, they are completely integrated Doherty
amplifiers that deliver the highest efficiency levels for base
station applications. With the ease of design-in of an ordinary
class AB transistor, they also provide significant
space and cost savings.
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NXP Semiconductors RF Manual 14
Doherty amplifier technology for state-of-art wireless infrastructure
th
edition
Key features & benefits
` Contains splitter, main- and peak amplifier, delay lines
` Design is as easy as with a single class AB transistor
` Ideally suited for space-constrained applications
` Currently available for TD-S-CDMA (BLD6G21L(S)-50) and
- 40% efficiency @ 10 W average power
- no additional tuning in manufacturing
and combiner in one package
(e.g. remote radio heads, antenna arrays)
W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details