BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 69

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.4
3.4.1 MMICs
Why choose NXP Semiconductors’ MMICs
` Reduced RF component count
` Easy circuit design-in
` Reduced board size
` Short time-to-market
` Broad portfolio
` Volume delivery
` Short leadtimes
` Excellent gain flatness^
` No output inductor necessary anymore^
^ = only for new satellite IF gain blocks, BGA28xx-family.
General-purpose wideband amplifiers (50 Ohm gain blocks)
Notes:
New general-purpose wideband amplifiers (50 Ohm gain blocks)
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
Bold Red
2-stage variable gain linear amplifier
Notes:
Type
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGA2714
BGA2715
BGA2716
BGA2717
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
Type
BGA2031/1
NEW : RF MMIC selection guide on www.nxp.com/mmics Easy-to-use
(1)
(1)
= New, highly recommended product
Upper -3 dB point, to gain at 1 GHz.
Gain = GP, power gain.
parametric filters help you to choose the right zRF MMIC for your design.
RF ICs
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Package
SOT363
(V)
(V)
3.3
3.3
3.3
3.3
5.0
5.0
5.0
(2)
V
V
5
3
3
5
5
5
5
3
5
5
3
5
5
5
(V)
s
s
V
DG = Gain control range
3
s
@
@
@
14.6
21.0
15.9
(mA)
(mA)
4.3
12.6
33.3
24.4
23.5
12.3
25.5
27.5
4.58
12.4
16.4
19.6
22.7
15.4
5.7
8.0
9.7
7.7
I
I
(mA)
s
s
51
(2)
I
(2)
(2)
(2)
s
(2)
@-3 dB
@-3 dB
(GHz)
(GHz)
Optimized parameter
3.6
Fu
2.4
2.8
3.6
3.2
3.6
2.5
2.7
3.3
3.2
3.2
3.0
2.3
2.6
1.9
2.1
>3
>3
>3
>3
Fu
Frequency
-
800-2500
(1)
(2)
Range
2.3
1.9
(dB)
(dB)
NF
4.8
4.5
4.9
4.0
3.9
4.7
4.8
4.6
4.2
2.2
2.6
5.3
NF
3.4
3.6
3.4
2.8
3.9
3.7
3.6
(2)
(2)
@ 1 GHz
Gain
(dBm)
13.2
Gain
10.5
12.5
13.8
14.0
12.9
(dB)
20.2
22.1
25.4
31.2
23.3
31.9
23.4
(dB)
-2.3
-3.4
-4.0
11.6
P
2.8
4.8
9.7
1.4
24
sat
(2)
(1)
@ 1 GHz
Gain
(dBm) (MHz) (MHz) (MHz) (MHz)
23.2
35.5
OIP3
DG
32.3
20.4
(dB)
13.1
21.8
21.4
22.7
21.3
30
20.1
21.7
22.9
23.9
11.5
13.6
18.2
16.1
20.9
@ 900 MHz
(dB)
(3)
17.7
8.7
62
Gain = |S
(2)
(2)
(2)
(2)
(3)
(dBm) (dBm)
(dBm)
12.2
20.0
22.3
26.2
32.0
22.9
23.0
P
-0.7
12.1
12.0
11.2
-8.0
-2.6
250
31.2
P
-9.2
-7.9
8.3
0.2
5.6
8.9
7.2
11
1dB
1dB
21
|
2
ACPR Gain
OIP3
(dBc)
18.6
22.7
20.5
22.2
10.0
Gain (dB) @
950
20.2
22.1
25.4
31.2
23.2
31.8
23.3
21.9
-1.9
8.3
2.1
2.3
22
23
49
11
18
1550
MHz
22.2
30.6
100
13.0
14.8
20.3
22.4
20.8
25.0
19.5
35.2
30.0
20.8
13.3
22.1
18.6
20.6
23.0
25.5
23.9
32.6
24.0
(dB)
23
(1)
Gain
2150
DG
@1900 MHz
GHz
20.4
23.2
23.0
20.4
20.8
23.3
22.8
20.6
23.8
25.8
28.7
14.1
17.6
21.9
37.0
31.8
34.1
25.1
24.0
31.4
24.3
(dB)
2.2
56
(2)
NXP Semiconductors RF Manual 14
(3)
(dB) @
(dBm)
GHz
13.8
15.0
21.8
22.1
21.2
32.0
29.7
30.5
22.1
22.1
24.0
17.9
19.9
19.4
P
2.6
13
1dB
ACPR
(dBc)
GHz
12.7
15.5
19.3
19.3
28.0
18.7
26.1
26.4
16.8
20.1
20.8
22.1
11.9
21.1
3.0
49
3.3
(V)
(V)
V
V
6
4
4
6
6
6
6
4
6
6
4
6
6
6
s
s
Limits
Limits
(mA)
(mA)
20
15
50
34
35
25
35
50
35
30
10
25
15
77
I
I
8
s
s
th
(mW)
(mW)
edition
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
P
P
tot
tot
71